A high performance double-gate SOI MOSFET using lateral solid phase epitaxy

We fabricate a double-gate SOI MOSFET using lateral solid phase epitaxy with high dose Si and Ge ion implantation. Device characterization showed that the double-gate MOSFET has superior performance as compared to the single-gate SOI MOSFET in terms of current drive, subthreshold slope, and V/sub t/ roll-off. The effective electron mobility of the LSPE crystallized layer is only 17% lower than that of commercial SOI wafers.