Large Memory Window Antifuse HfO₂-Based One-Resistor and One-OTP NVMs Featuring Excellent Disturbance Tolerance and Robust 200 °C Retention

In this work, CMOS-compatible antifuse HfO2-based one-resistor and one-OTP (1R1O) nonvolatile memories (NVMs) were successfully fabricated and achieved a record-high pulsed memory window (MW) of
$2\times 10^{{8}}$
at a low read voltage of 1 V for the first time. By modulating the switching oxide thickness, the 1R1O NVMs with a 5 nm HfO2 tested under a crossbar memory array scheme can tolerate a write/read disturbance of
$2\times 10^{{7}}/10^{{9}}$
cycles and show a robust 200 °C retention with an extremely stable pulsed MW of
$2\times 10^{{8}}$
after the read disturbance (RD) of
$10^{{9}}$
cycles. According to pulsed characteristic and reliability viewpoints, the 5 nm HfO2 1R1O NVMs are very suitable candidates for Internet of Things (IoTs) and automotive (ATV) security integrated circuits (ICs).