Novel Reconfigurable Transistor With Extended Source/Drain Beyond 3 nm Technology Node

In this work, a novel stacked nanosheet reconfigurable field effect transistor with extended source/drain (ESD-NSRFET) is proposed to improve ON-current (
${I} _{ \mathrm{\scriptscriptstyle ON}}$
), where an additional extended source/drain is intersected between the vertically stacked nanosheets. Compared to the conventional nanosheet RFET (NSRFET),
${I} _{ \mathrm{\scriptscriptstyle ON}}$
of proposed ESD-NSRFET with 4 nm extended source is demonstrated to improve by
$176\times $
and
$80\times $
for n-type and p-type program, respectively. Geometry parameters like extended source/drain length
${L} _{\text {ESD}}$
, nanosheet width
${W} _{\text {NS}}$
, and nanosheet thickness
${T} _{\text {NS}}$
are investigated in point of
${I} _{ \mathrm{\scriptscriptstyle ON}}$
. Considering the trade-off between increased tunneling strength and degraded parasitic source resistance,
${L} _{\text {ESD}}$
in ESD-NSRFET should be carefully designed to obtain optimal current. The underlying physical mechanism is also discussed in detail.