A Snapback-Free and High-Performance Trench Gate Reverse-Conducting SOI-LIGBT With Self-Adaptive nMOS

A snapback-free and high-performance trench gate reverse conducting (RC) lateral insulated gate bipolar transistor based on silicon-on-insulator (SOI-LIGBT) is proposed. With an integrated Schockley diode, the RC and snapback-free forward conducting are accomplished. With a self-adaptive trench gate nMOS, fast and soft reverse recovery as well as low peak forward recovery voltage (
${V}_{\text {FRM}}{)}$
is achieved for the diode mode, and low turn-off loss (
${E}_{\text {off}}{)}$
is achieved for the lateral insulated gate bipolar transistor (LIGBT) mode. With a self-adaptive planar gate nMOS, the forward ON-state voltage drop (
$\left(V_{\mathrm{CE}(s a t)}\right)$
can be reduced. By using a deep trench with p-ring (DTP), high dynamic avalanche immunity (DAI) is obtained. The trench gate DAI LIGBT combined with a p-i-n diode with a DPT (DTP p-i-n diode) is used for comparison, where the total area of the proposed RC-IGBT is reduced by 42%. Simulation results show that the proposed RC-LIGBT can safely turn off under 100% breakdown voltage and reduce
${E}_{\text {off}}$
by 60% compared to the DAI LIGBT. The reverse recovery charge (
${Q}_{\text {rr}}{)}$
of the proposed RC-LIGBT is 38% of the DTP p-i-n diode and 19% of the conventional p-i-n diode. The reverse recovery softness (
${S}{)}$
is increased to 1.05 compared to the DTP p-i-n diode (
${S}$
= 0.14) and the conventional p-i-n diode (
${S}$
= 0.11).