Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

Asymmetric field cycling recovery (AFCR) with alternating opposite low
${E}$
-field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to
$10^{{12}}$
switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of
$\Delta 2{P}_{\text {r}}$
toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.