High Temperature Mid-Wave Infrared InAsSb Barrier Photodetectors

We report on mid-wave infrared InAsSb photodetectors with high-barrier materials implemented in the depletion region. The devices exhibit promising performance at high temperature. At 160 K, the 50% cutoff wavelength is
$4.18~\mu \text{m}$
, and the shot noise limited detectivity
$D^{\star} $
is
$1.57\times 10 ^{12}$
cm
$\cdot $
Hz
$^{1/2}$
/W for the peak wavelength of
$3.79~\mu \text{m}$
. At 300 K, the 50% cutoff wavelength is
$4.70~\mu \text{m}$
, and the
$D^{\star} $
is
$4.87\times 10 ^{9}$
cm
$\cdot $
Hz
$^{1/2}$
/W for the peak response wavelength of
$4.15~\mu \text{m}$
. The dark current of the device is found to be dominated by the diffusion current rather than the generation-recombination current for the temperature range of 160–300 K. We also determine the Varshni parameters of the InAsSb material with varying strain, and the bandgap bowing parameters.