Experimental Demonstration of Coplanar NbOx Mott Memristors for Spiking Neurons

Threshold switching (TS) devices based on NbO2 Mott memristors have become important candidates for constructing artificial neurons in neuromorphic computing hardware. However, there is lack of research on the impact of device structure on performance of NbOx neurons. In this letter, NbOx-based TS devices are experimentally achieved by utilizing coplanar electrodes. We also propose a method to improve the reliability by using the passivation layer that can prevent the oxidation of the NbOx. Nonlinear neural dynamics are experimentally implemented using artificial neuron circuits. The success of coplanar device facilitates the future realization of multi-terminal NbOx neurons and provides a basis for further investigation on TS mechanism of NbOx Mott memristors.