Rapid thermal curing of low-k spin-on films

We have used short time, high temperature, and high ramp-rate thermal cycles for curing organic low-k spin-on films in a rapid thermal processing (RTP) system. We show that such cycles can give lower copper diffusion through barrier layers than the conventional low temperature, long duration cycles carried out in furnaces. In addition, a highly controlled ambient is needed to prevent film oxidation. All of these requirements make RTP ideally suited for low-k film curing. Therefore, RTP can enable integration of low-k films in advanced interconnect schemes.