1300-V 6H-SiC lateral MOSFETs with two RESURF zones

A two-zone, lateral RESURF field 6H-SiC MOSFET with breakdown voltage as high as 1300 V and specific on-resistance of 160 m/spl Omega//spl middot/cm/sup 2/ has been fabricated. These MOSFETs exhibit stable and reversible breakdown indicating avalanche breakdown in SiC that has not been reported in earlier lateral SiC MOSFETs.