Emission energy and polarization tuning of InAs/GaAs self-assembled dots by growth interruption

Quantum dots (QDs) are promising heterostructures of nanometric size for applications in optoelectronics and for fundamental studies. A key issue for the full exploitation of self-assembled QDs is the control of their size, shape and density by means of growth conditions. Here we report on the influence of growth interruption time (t/sub i/), growth temperature (T/sub G/), and substrate orientation on the optical properties of InAs/GaAs QDs.