Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 /spl mu/m quantum dot laser

In recent years, self assembled quantum dots (QDs) have attracted much attention, because of the great potentialities expected from their zero dimensional confinement properties, especially for the realization of opto-electronic devices such as lasers. Indeed, for a QD based laser, a lower temperature dependence (high T/sub 0/), a lower chirp (/spl alpha//sub H/) and a higher modulation bandwidth are predicted compared to the conventional quantum well lasers. Numerous studies have been performed for the growth of InAs/GaAs QDs, and lasers have been realized, presenting improved performances (T/sub 0/=161 K @ 350 K [1], /spl alpha//sub H/=0 @ 1 GHz [2]).