Strong blue emission from isoelectronically P-doped GaN epilayers grown by gas source molecular beam epitaxy

The GaN-rich side of GaP/sub x/N/sub 1-x/ alloy exhibits a potentially large bandgap bowing with only a small amount of P incorporation. As a result, there could be interesting device applications. GaN:P layers were grown by molecular beam epitaxy (MBE) on GaN template layers grown by metalorganic chemical vapor deposition. GaP was used as the phosphorus source, P/sub 2/, and the N/sub 2/ plasma as the nitrogen source.