1.3 /spl mu/m InGaAsN/GaAs edge emitting and vertical cavity surface emitting lasers grown by molecular beam epitaxy

We has designed and fabricated edge-emitting InGaAsN/GaAs quantum well lasers operating at 1.32 /spl mu/m. The layer structure is grown by molecular beam epitaxy. Continuous-wave operation at low threshold current has been demonstrated at room temperature. We also demonstrated a photo-pumped 1.28 /spl mu/m continuous-wave vertical-cavity surface emitting laser grown in a single nucleation process by molecular beam epitaxy.