A self-timed dynamic sensing scheme for 5V only multi-Mb flash E/sup 2/PROMs

In recent years, several types of flash E'PROM have been proposed to enhance the density of electrically alterable non-volatile memories. However, shrinking the memory cell causes the reduction of the cell current, 80 that a sensitive sensing scheme has been required, which replaces the conventional current sensing. A simultaneous multi-bit reading is also necessary for L high speed serial and page mode reading.