An /spl alpha/-immune, 2V supply voltage SRAM using polysilicon PMOS load cell

As the Pate length Of MOSFETs is scaled down to deep sub-micron ~lze~. the supply voltage has to be reduced due to hot OBPPI~P and/or power dissipation Problems. Factors limiting this low~rlng of the supply volta88 in Swude using high rssistor load cell (high-R os111 are a-partiole-induced mft error and eleotriaal instabillties during the reading and writing opsrations. Althoirsh full CWS os118 are stable for low voltage opsrationlll, their large size ItWioe 118 large) is not suitable far high density Swude. Thus, a polysilioon PMOS load(PPL) cslll21.