An experimental low temperature DRAM

For over a decade many investigators have studied and demonstrated performance advantages of MOS devices at liquid nitrogen temperatures [l]. Recently the concept of "high speed" DRAM, a new category of DRAM emphasizing performance. at Sr" sacrifice to cost, has been demonstrated [21. In this paper these two concepts are successfully merged to produce a very high speed 512K CMOS DRAM with a 12 ns access time.