Impurity-profile-based threshold-voltage model of pocket-implanted MOSFETs for circuit simulation

A new threshold voltage (V/sub th/) model has been developed for the pocket-implant technology. The model extracts the threshold condition from the entire mobile charge concentration in the channel with only five additional parameters; the maximum doping concentration (N/sub subp/) of the pocket profile, the penetration length (L/sub p/) into the channel, and three enhanced short-channel parameters. The model reproduces the measured V/sub th/ versus. gate-length (L/sub gate/) characteristics with an average error of a few millivolts under any bias conditions.