Comparison of ZnSe-based quantum well and quantum dot laser diodes emitting at 560 nm

Summary form only given. In principle, quantum dots should give rise to better operational characteristics concerning threshold current density and temperature stability and, furthermore, they are supposed to be less susceptible to defects. Recently we were able to demonstrate the first electrically pumped ZnSe-based laser diode employing a fivefold stack of CdSe quantum dots embedded into strain-compensating ZnSSe spacer layers. These quantum dot lasers emit around 560 nm. The only difference to our usual quantum well laser diodes is the design of the active region. Thus we are able to directly compare the different characteristics of quantum wells and quantum dots. Low-temperature photoluminescence spectra and constant current degradation experiments are reported.