Long wavelength GaInNAs(Sb) lasers on GaAs

Summary from only given. We present a new structure utilizing antimony, either incorporated into the crystal or used as a surfactant, to enable higher nitrogen and indium incorporation. This results in a shift of the post-annealed emission to longer wavelengths. The material for this study was grown by MBE with an RF plasma source. GaNAsSb barriers can also reduce the overall strain of the active region GaInNAsSb quantum wells and GaNAsSb barriers because the high In mole fraction QWs are compressively strained and the GaNAs barriers are tensile strained.