Quantum and semiclassical modeling of the threshold voltage dispersion due to random dopants in deep submicron MOSFETs

We have investigated the threshold voltage dispersion in deep submicron mosfets with three dimensional statistical simulations. We show that the doping fluctuations in the vertical directions account almost for the whole dispersion of the threshold voltage. Therefore, we have been able to reproduce the results with a one-dimensional simulator in which also quantum confinement in the channel is taken into account.