An enhancement-mode MOS voltage-controlled linear resistor with large dynamic range

It is shown that the depletion-mode linear resistor of Babanezhad and Temes (IEEE J. Solid-State Circuits, vol. SC-19, p.932-8, 1984) can be implemented in enhancement-mode devices. This allows a large increase in the dynamic range of the resistors. By inserting a bias source, the linearity can also be improved. A layout and experimental results on the resulting IC are included.<
>