Scanning probe lithography with real time position control interferometer

We have constructed an integrated SPM and an xy-position interferometer to properly control the dimensions of the lithography patterns. The tracking error of xy-dimensional positioning system is about 2 nm accuracy and the positioning resolution could reach 0.1 nm. The scanning probe microscope (SPM) oxidation and anisotropic tetra-methyl ammonium hydroxide (TMAH) etching were used to produce smooth and uniform nanopatterns on silicon substrates. The combination of SPM oxidation and real time position control is a promising approach to accurately produce prototyping of functional nano-devices.