A 2GHz down converter IC fabricated by an advanced Si bipolar process (DNP-III)

A Si down-converter IC has been developed in order to satisfy the growing market for realizing lower cost in commercial microwave equipment, such as DBS (direct-broadcasting satellite) receivers and the GPS (Global Positioning System). Using a novel 0.6- mu m-emitter-width Si bipolar process, called DNP-III (direct nitride passivated base surface) for an f/sub T/ of 20 GHz, more than 10 dB of gain has been successfully obtained in the 1-2 GHz frequency range. Power dissipation is typically 125 mW for 5-V single supply voltage. Results confirmed the usefulness of the application of Si bipolar process to commercial microwave products.<
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