A 0.35-/spl mu/m SiGe BiCMOS RF front-end IC for TD-SCDMA receiver

A TD-SCDMA RF front-end receiver IC, which is fabricated in a 0.35 /spl mu/m SiGe BiCMOS technology, is presented in this paper. This IC contains two blocks, low-noise amplifier (LNA) and mixer, and operates at 2.7 V supply voltage with a current consumption of 14.7 mA. The measured NF and power gain of the IC are 2.7 dB and 31 dB, respectively. It is shown that RF front-end circuit which is implemented in a SiGe BiCMOS process has more advantages than CMOS circuits, such as power consumption and NF performance.