Low-loss high power microwave switching using novel nitride based MOS heterostructure field-effect transistors

A microwave switch based on a novel nitride based metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) is proposed and demonstrated. Due to record high saturation current and breakdown voltage, negligible gate leakage current and low gate capacitance, the proposed switch allows for less than 0.3 dB insertion loss and more than 35 dB isolation. The unique feature of the MOSHFET based switch is the maximum switching power, in excess of 80 W for a 1 mm wide active element.