An updated temperature-dependent breakdown coupling model including both impact ionization and tunneling mechanisms for AlGaAs/InGaAs HEMTs

An updated model on the temperature dependent two-terminal breakdown mechanisms coupling both impact ionization (II) and thermionic field emission (TFE) for HEMTs is presented in this paper. This model depicts the interplay between TFE and II mechanisms. Examples of temperature dependence of reverse gate current are discussed. It is important that the coupling mechanism between TFE and II at elevated temperature should be considered, particularly when designing devices for high-power applications.