1.3 micron InGaAsN oxide-confined VCSELs grown by MOCVD

Summary form only given. An Emcore D 180 metalorganic chemical vapor deposition (MOCVD) system was used to develop 1.3 micron InGaAsN/GaAs vertical cavity surface emitting lasers (VCSELs). The InGaAsN VCSELs are dry etched to form a 42 micron mesa that is subsequently wet oxidized to form apertures ranging from 6.0 to 8.5 microns. The quasi-single mode laser was modulated with a pseudorandom bit sequence at 2.5 Gbit/sec at room temperature.