High power 660 nm optically pumped semiconductor thin-disk lasers

Summary form only given. We have for the first time implemented an optically pumped semiconductor thin-disk laser (OPS-TDL) emitting at visible wavelengths around 660 nm. The gain element is based on the AlGaInP material system, grown lattice-matched on GaAs. The epitaxial structures consist of a resonant periodic gain structure with varying number of periods and stacks of 1 to 4 quantum wells per period.