Degradation behaviour of polysilicon high voltage thin film transistors

The degradation characteristics of polycrystalline silicon Off-set Drain High Voltage Thin Film Transistors (OD-HVTFTs) are reported. The results demonstrate a pronounced kink in the transfer characteristics at high gate bias, due to degradation of the offset region. This effect is particularly noticeable in non-hydrogenated HVTFTs. Annealing of devices in atmospheric ambient after stress shows temperature dependent recovery.