Electrical properties of rapid thermally annealed PZT films deposited through a novel sol-gel process

Pb(Zr/sub 0.52/Ti/sub 0.48/)O/sub 3/ film has been deposited through a novel sol-gel process on Pt/Ti/SiO/sub 2//Si and annealed in a rapid thermal processor at 650/spl deg/C. The well-crystallized film is very smooth with a roughness of /spl sim/2.0 nm. The remnant polarization Pr (/spl sim/28.5 /spl mu/C/cm/sup 2/) and coercive field Ec (/spl sim/39.8 kV/cm) have been derived from the P-E hysteresis loop. The films have a dielectric constant of /spl sim/1080 and a dielectric loss of /spl sim/0.01 at 1 kHz. A ferroelectric polarization fatigue test of the films has shown a high fatigue resistance up to 3/spl times/10/sup 10/ cycles before Pr is decreased by 50%.