X-ray diffraction simulation of strained InGaAs/AlGaAs multiple quantum wells grown by molecular beam epitaxy

We present a simplified X-ray diffraction simulation method for InGaAs/AlGaAs multiple quantum well (MQW) structures grown by molecular beam epitaxy. In this method, an additional relationship between the structural parameters is derived from the MQW growth information. As a result, the number of independent variables is reduced to just one. This represents a significant improvement in the time required to obtain an X-ray dynamical simulation solution for MQW structures.