Integration of multi-voltage analog and power devices in a 0.25/spl mu/m CMOS + flash memory process

This paper presents the integration of multivoltage analog and power devices into a 0.25 /spl mu/m CMOS + flash memory process based on Motorola's HiPerMOS/spl trade/ platform. A variety of MOSFETs and BJTs with breakdown voltage ranging from 10 V to more than 40 V, as well as high sheet resistance precision resistors, have been fabricated with the addition of only 3 simple masked implants to the existing process.