Guard ring assisted RESURF: a new termination structure providing stable and high breakdown voltage for SiC power devices

A new junction termination structure named guard ring assisted reduced surface field (GRA-RESURF) is proposed. The structure maintains a stable and high breakdown voltage without being influenced by the deviation of impurity dose in the RESURF layer or by parasitic charge. The GRA-RESURF structure was adopted on 600 V range 4H-SiC Schottky barrier diodes, and achieved high breakdown voltages with a good production yield.