Switching properties of 2 kV SiC-SIT

A completely vertical channel type static induction transistor with the novel gate structure is fabricated. Highest blocking voltage of 2000 V in the case of vertical channel type silicon carbide SITs and low on-resistance of 70 m/spl Omega//spl middot/cm/sup 2/ are realized. Turn-off characteristics are investigated and very fast turn-off time of 20 ns at high temperature of 200/spl deg/C under dc voltage of 1000 V is successfully demonstrated. Large current turned-off properties are also demonstrated by a parallel connection of two small SITs.