150-V class superjunction power LDMOS transistor switch on SOI

The electrical characteristics of a 150 V class superjunction power LDMOS transistor switch on SOI are compared with those of a conventional SOI RESURF (reduced surface field) LDMOS transistor using simulation. The proposed device has an effective chip area of 0.91 mm/spl times/0.91 mm and exhibits a specific on-resistance of 1.65 m/spl Omega/cm/sup 2/, and a total gate charge of 1.17 nC at V/sub gs/=10 V with a related figure of merit (FOM=Q/sub g/.R/sub on/) of 0.23 /spl Omega/.nC.