120 V multi RESURF junction barrier Schottky rectifier (MR-JBS)

In this paper, we report a 120 V multi RESURF junction barrier Schottky rectifier (MR-JBS). For the first time, we fabricated a 120 V MR-JBS with high aspect p-n junction ratio by filling trenches with single crystal Si using epitaxial growth. By balancing the charge of the p and n regions, V/sub BR/=161 V (at I/sub R/=1 mA), V/sub F/=0.69 V (at J/sub F/=200 A/cm/sup 2/) and J/sub R/=3.3/spl times/10/sup -5/ A/cm/sup 2/ (at V/sub R/=120 V) were obtained. Moreover, by optimizing the n-type drift region, V/sub BR/=130 V, V/sub F/=0.62 V and J/sub R/=4/spl times/10/sup -5/ A/cm/sup 2/ were obtained. This V/sub F/ is 0.17 V lower than conventional 120 V SBDs.