InGaAs PIN detectors for frequencies above 100 GHz

High-frequency vertical PIN detectors with highly p-type doped InGaAs basis layer were investigated. Reducing the PIN area and series resistance together with the thickness of the undoped drift region results in f3dB corner frequencies of up to 120 GHz. In addition, the vertical PIN concept reveals several advantages compared to waveguide PINs like the possibility to build two dimensional detector arrays and it is perfectly suited for monolithically integrated opto-electronic receiver ICs (OEIC). Further PIN and OEIC results will be presented.