GaAs-based GaAsNSe/GaAs superlattices emitting at 1.5 /spl mu/m-wavelength region

GaAsNSe/GaAs superlattices (SLs) were grown on GaAs(001) substrates by metalorganic molecular beam epitaxy (MOMBE). Strong photoluminessence (PL) emission with wide luminescence line at 1.5 μm-wavelength region was observed. It was found that nonradiative recombination in GaAsNSe layers was suppressed by heavy Se doping. GaAsNSe alloy is expected to be a new material for the 1.5 μm-wavelength devices of the GaAs based ststem.