Annealing characteristics of He/sup +/-ion implant isolation of InP/InGaAs HBT structures

Electrical isolation by He-ion implant isolation on multi-layer InP/InGaAs heterojunction bipolar transistor (HBT) structure has been investigated. The isolation of this structure was tested with a single energy implantation of helium-ion at 600 keV with a dose of 3/spl times/10/sup 15/ cm/sup -2/ at room temperature. Post implant annealing was performed for 60s from 50/spl deg/C to 450/spl deg/C. Maximum achievable sheet resistance was 8/spl times/10/sup 4/ /spl Omega//sq for the collector contact layer, at an annealing temperature of 350/spl deg/C. Annealing characteristics of implanted HBT layer as a function of annealing time and annealing temperature are reported here for the first time, to the best of our knowledge.