Comparative study on implant anneal using single wafer furnace and lamp-based rapid thermal processor

Comparative stud on rapid thermal annealing (RTA) of various implant species (/sup 11/B/sup +/, /sup 49/BF/sub 2//sup +/, /sup 31/P/sup +/ and /sup 75/As/sup +/) in 200mm diameter Si wafers was done using a single wafer furnace (SWF) system and a lamp-based RTP system under 1 atm N/sub 2/ atmosphere. Average sheet resistance and its uniformity were measured after annealing under various conditions. Production worthy process windows for SWF and lamp-based conventional RTA systems are also compared. Lower average sheet resistance and superior sheet resistance uniformity were achieved in wide process conditions using SWF system. Effect of annealing on dopant redistribution was investigated using secondary ion mass spectroscopy (SIMS). The validity of "spike anneal" was discussed based on electrical activation and dopant diffusion mechanisms in implanted Si wafers.