A 1.2 Gbps SOI-BiCMOS write driver for hard disk drives

This paper describes a voltage-type write driver for a +5/-5 V preamplifier. A good rise/fall time and smooth settling are achieved with full or partial impedance matching by maximizing the driving voltage up to the power source. Designed in 0.35 /spl mu/m SOI-BiCMOS, it has demonstrated a rise time as short as 0.34 ns with a peak-to-peak write current of more than 150 mA at a data transfer rate of 1.2 Gbps.