A comparison of buried oxide characteristics of single and multiple implant SIMOX and bond and etch back wafers

The current through the buried oxides of single- and multiple-implant SIMOX and bond and etchback silicon-on-insulator (BESOI) wafers was measured as a function of radiation dose. From these measurements, conductivity and static capacitances are derived. High-frequency capacitances were also measured. Leakage current through the buried oxide of multiple-implant SIMOX is considerably less than that of single-implant SIMOX (more than an order of magnitude). High-frequency and static capacitances, as a function of total dose, were used to study the buried-oxide-top-silicon interface and the buried-oxide-bottom-silicon interface. Multiple implant had fewer interface traps than single implant at prerad and after irradiation.<
>