Superjunction Reliability Analysis Under Extreme High Positive and Negative Gate Voltage Stress

High gate stress test is an extremely important part of power device reliability test. On this basis, a 650 V super junction device is designed and fabricated, conventional stress test including high temperature gate bias (HTGB), high temperature reverse bias (HTRB) test results show that the device possess good reliability. The degradation of performance parameters under extreme high gate stress (including positive and negative) and the corresponding mechanism is further studied. It is found that the main performance parameters of superjunction MOSFET (SJ-MOSFET) will change significantly when the gate voltage stress is greater than 70 V. Under the positive high gate voltage stress, the threshold voltage decreases significantly. Under the negative high gate voltage stress, the threshold voltage also shifted to the left. Comparing the device under the same value of positive and negative high gate stress, it is found that the degradation degree of the device under positive stress is far greater than that under negative stress. Theoretical analysis combined with experimental data believes that the two degradation mechanisms are different. For positive stress, tunneling electrons collide on their way to the gate electrode creating electron–hole pairs, and the holes are captured by traps. But for negative gate voltage, holes tunnel and serve as extra gate positive charge directly. The electron injection efficiency is much higher than hole injection efficiency. Besides, the n-type region is larger at the bottom of the gate. Simultaneously,
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measurement is also taken to prove the hypothesis.