Development of drift-strip detectors based on CdZnTe

The development results of drift-strip detectors on the basis of CdZnTe crystals of dimensions 10/spl times/10/spl times/3 mm/sup 3/ are presented. The pitch of the structure was 200 /spl mu/m, the strips width -100 /spl mu/m, the inter-strip gaps -100 /spl mu/m, the length of strips is 9.5 mm. Design and technological aspects of the development of drift strip detectors are described. The distribution histograms for leakage currents of strips as well as distribution of interstrip resistance by the numbers of strips on various detectors are presented. Energy resolution at energies 59.5 and 661 keV was 1.9 and 12 keV correspondingly. Energy resolution at high energies was limited by the transport characteristics of the charge carriers.