Intrinsic sensitivity of CdZnTe semiconductors for digital radiographic imaging

The intrinsic sensitivity of Cd/sub 1-x/Zn/sub x/Te semiconductor detectors have been theoretically modeled and experimentally measured, within the X-ray diagnostic energy range. The purpose of this study is to optimize the detector signal parameters of these solid state ionization devices for digital imaging applications. The experimental results of this study indicate that Cd/sub 1-x/Zn/sub x/Te detectors exhibit good intrinsic sensitivity.