Investigation of the Gate Voltage Overshoot of IGBTs Under Short Circuit Type II Condition

In this article, the physical reason for the gate voltage
${V}_{\text {GE}}$
overshoot of the insulated gate bipolar transistor (IGBT) under short circuit type II (SC type II) condition is investigated. The classic capacitive coupling from the Miller capacitance at the low collector-emitter voltage regime is studied. Moreover, it has been found that the Miller effect is not the only cause of the
${V}_{\text {GE}}$
overshoot. The interaction between the channel voltage and the gate voltage plays an essential role in the
${V}_{\text {GE}}$
overshoot as well. A novel mechanism of the channel potential modification generated displacement current through the gate oxide capacitance is proposed. Consequently, both effects lead to a
${V}_{\text {GE}}$
overshoot before the fast desaturation process.