Nearly Ideal Breakdown Voltage Observed in Lateral p-i-n Diodes Fabricated on a SiC High-Purity Semi-Insulating Substrate

Lateral p-i-n diodes with small i-region width (less than
$5 ~\mu \text{m}$
) were fabricated by direct ion implantation into a high-purity semi-insulating silicon carbide (SiC) substrate. The breakdown voltage of the diodes increased with increasing the i-region width and a lateral effective breakdown electric field of 1.7–1.9 MV/cm was obtained. The experimental breakdown voltage well agreed with the technology computer-aided design (TCAD) simulation, indicating that deep levels contributing the semi-insulating property do not seriously deteriorate the breakdown voltage in case of the small i-region width.