Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer

In this article, an ohmic contact structure based on indium tin oxide (ITO)/Ti/Al/Ni/Au is explored for high-performance GaN-on-GaN Schottky barrier diode (SBD) for the first time. Owing to the ultrathin ITO interfacial layer, the Fermi-level pinning (FLP) effect in metal-semiconductor interface could be mitigated, thus the specific contact resistivity (
$\rho _{c}{)}$
on N-polarity was reduced from
$3.32\times 10^{-{3}}$
to
$7.36\times 10^{-{5}}\,\,\Omega $
cm2, and the specific ON-resistance (
${R}_{\text {ON}}{)}$
of the device was reduced from 3.14 to 1.17
$\text{m}\Omega $
cm2 under the same testing condition. With the Helium ion implantation technology, a high breakdown voltage (
${V}_{\text {BR}}{)}$
of 1100 V, low turn-on voltage
${V}_{\text {ON}}$
of 0.63 V, and a high figure of merit (
${V}_{\text {BR}}^{{2}}/{R}_{\text {ON}}{)}$
of 1.04 GW/cm2 were achieved in this work. The vertical GaN SBD with ITO interfacial layer fabricated in this work achieved the lowest
$\rho _{c}$
in the reported GaN-on-GaN SBDs with an indicated anode size.