Plasma impedance in a narrow gap capacitively coupled RF discharge

Capacitively coupled reactors with narrow gap spacings are extensively used for plasma enhanced chemical vapor deposition (PECVD) processes in the semiconductor industry. An understanding of the plasma impedance is important for efficient coupling of the source power to the plasma. The plasma impedance can change based on operating conditions as the structure of the discharge changes. The plasma impedance and power requirement are calculated for different RF potential. Images of the electron density distribution, and the electron and ion density profiles in the well-resolved sheath are also presented to provide better insight of the plasma behavior.