Photodetectors monolithically integrated on SOI substrate for optical pickup using blue or near-infrared semiconductor laser

We made photodetectors on a silicon-on-insulator (SOI) substrate by a 0.35-/spl mu/m BiCMOS fabrication process to detect the signal light used in an optical disk system. Investigating their characteristics at two wavelengths, 410 and 780 nm, for different structures, we found that the thickness of the silicon crystalline layer on the insulator strongly affected the frequency response at the longer wavelength, while the cutoff frequency was over 500 MHz for the shorter wavelength. We also simulated the frequency response.